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Mitsubishi Electric launches the N-series MOSFET 1200V SiC

Mitsubishi Electric launches the N-series MOSFET 1200V SiC

On June 16, 2020, Mitsubishi Electric corporation announced the market launch of its N 1200V SiC-MOSFET (silicon carbide and metal semiconductor field effect transistor) with low power loss and high tolerance for self-switching. The new series will help reduce energy consumption and miniaturize power systems that require high voltage conversion, such as on-board electric vehicle (EV) chargers, photovoltaic systems and more.

Mitsubishi Electric will show its new N 1200V SiC-MOSFET series at major trade shows including PCIM Asia 2020 in Shanghai, China from November 16 to 18.

The new series has the following features:

1) Reduced power consumption and miniaturization of power-supply systems

- JFET doping technology reduces both switching loss and turn-on resistance, achieving an industry-leading figure of merit (FOM - Power MOSFET Performance Index, calculated by multiplying the turn-on resistance by the gate drain charge) of 1450 mΩ nC. The power consumption of the power systems is approximately 85% lower compared to conventional Si-IGBTs.

- By reducing the mirror stray capacitance between Gate and Drain existing in MOSFET structure (Crss), the self-turn-on tolerance improves 14 times compared to competitor products. In this way, a fast switching operation can be realized and helps to reduce the switching losses.

- The reduced switching power loss allows the size and simplification of cooling systems as well as the reduction of the size of peripheral components such as the reactor by driving the power semiconductor with a higher carrier frequency (the frequency that determines the on / off time of the switching element in the inverter circuit), thus helping to reduce the cost and size of the overall system power source.

2) Six models for various applications including AEC-Q101 compliant models

- The product lineup includes models which are qualified with Automotive Electronics Council's AEC-Q101 standards. Therefore, the N-series SiC-MOSFET can be used not only in industrial applications such as photovoltaic systems, it can also be used in EV on-board chargers.

Source: mitsubishielectric

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