Infineon BSM50GD120DN2

Infineon BSM50GD120DN2 bsm50gd120dn2 product image 1
SKUBSM50GD120DN2
ManufacturerInfineon
CategoryIndustrial automation components
12-month warranty
Out of stock
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1
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Description

The Infineon BSM50GD120DN2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) power module designed for demanding industrial applications. This module features a 3-phase full-bridge configuration, incorporating fast free-wheel diodes, and is housed in an insulated metal base plate package, ensuring efficient thermal management and reliability. With a collector-emitter voltage rating of 1200 V and a maximum continuous collector current of 50 A at 25°C, it delivers robust performance for power conversion tasks. The module also supports a pulsed collector current up to 144 A, accommodating transient conditions. Its power dissipation per IGBT is rated at 350 W, with a junction temperature range from -40°C to +150°C, making it suitable for various industrial environments. The BSM50GD120DN2 is RoHS compliant, reflecting its adherence to environmental standards. This module is ideal for applications requiring efficient and reliable power switching solutions, such as motor drives, inverters, and other power electronic systems.

Specifications

Weight
0.11 kgs
Voltage
1200 V
Current
50 A
Product Type
Module
Signal Level
1200 V

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